YBA2CU3O7-X THIN-FILMS ON DOUBLE BUFFER LAYERS ON SI(100)

被引：10

作者：

AGUIAR, R

SANCHEZ, F

PEIRO, D

FERRATER, C

VARELA, M

机构：

[1] Universitat de Barcelona, Departament de Física Aplicada i Electrònica, E-08028 Barcelona

来源：

PHYSICA C | 1994年 / 235卷

关键词：

D O I：

10.1016/0921-4534(94)91547-4

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of high quality YBa2Cu3O7-x thin films on silicon usually implies the use of buffer layers to reduce the chemical interaction and structure mismatches between the film and the substrate. Our first results on YBa2Cu3O7-x thin films on CeO2/YSZ double buffer layers show that material with good crystallinity and T-c above 90 K can be obtained but some optimization has to be done in the buffers to improve film morphology.

引用

页码：647 / 648

页数：2

共 5 条

[1] HIGH-QUALITY EPITAXY OF YBA2CU3O7-X ON SILICON-ON-SAPPHIRE WITH THE MULTIPLE BUFFER LAYER YSZ/CEO2 [J].