CALCULATION OF LIQUIDUS ISOTHERMS AND COMPONENT ACTIVITIES IN GA-AS-SI AND GA-P-SI TERNARY-SYSTEMS

被引:15
作者
JORDAN, AS [1 ]
WEINER, ME [1 ]
机构
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
关键词
D O I
10.1149/1.2401759
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1634 / 1641
页数:8
相关论文
共 39 条
[1]   EVIDENCE FOR A PRIMARILY NONRADIATIVE SIO DEFECT IN GAP [J].
BACHRACH, RZ ;
LORIMOR, OG ;
DAWSON, LR ;
WOLFSTIRN, KB .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5098-5101
[2]  
Bergh A. A., 1969, Ohmic contacts to semiconductors, P115
[3]  
BUSINGER P, 1965, NUMERISCHE MATHEMATI, V7, P259
[4]   VAPOR PRESSURE OF GALLIUM, STABILITY OF GALLIUM SUBOXIDE VAPOR, AND EQUILIBRIA OF SOME REACTIONS PRODUCING GALLIUM SUBOXIDE VAPOR [J].
COCHRAN, CN ;
FOSTER, LM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (02) :144-148
[5]   ORIENTATION EFFECTS ON ELECTRICAL PROPERTIES OF HIGH PURITY EPITAXIAL GAAS [J].
DILORENZO, JV ;
MACHALA, AE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1516-+
[6]   EFFECTS OF ASCL3 MOLE FRACTION ON INCORPORATION OF GERMANIUM, SILICON, SELENIUM, AND SULFUR INTO VAPOR GROWN EPITAXIAL LAYERS OF GAAS [J].
DILORENZO, JV ;
MOORE, GE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (11) :1823-+
[7]  
FROSCH CJ, 1967, T METALL SOC AIME, V239, P365
[8]  
GIESSEN B, 1959, Z METALLKD, V50, P274
[9]  
GUGGENHEIM EA, 1952, MIXTURES