LEED-AES STUDY OF THE AU-SI(100) SYSTEM

被引:110
作者
OURA, K
HANAWA, T
机构
[1] Electron Beam Laboratory, Faculty of Engineering, Osaka University, Suita, Osaka
关键词
D O I
10.1016/0039-6028(79)90328-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The system Au/Si(100) has been studied using LEED and AES. Au films grow as Au(111) | Si(100) having six azimuthally rotated orientations at low deposition temperatures below 50°C after the formation of intermediate gold suicide layers. Crystalline gold silicide thin layers are formed on the Au(111) film after heat treatment at 100-400°C. Two types of suicide LEED pattern observed seem to have no correlation with crystallographic data reported on quenched alloy films. Heat treatment over 450°C leads to agglomeration of the film, producing a series of Au-induced superstructures. Heat treatment of the Au film over 1000°C regenerates the clean Si surface accompanied with many etch pits. © 1979.
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页码:202 / 214
页数:13
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