ELECTRON-MICROSCOPY OF STRUCTURALLY DIFFERENT TITANIUM DISILICIDE FILMS, OBTAINED IN ONE TECHNOLOGICAL PROCESS

被引：1

作者：

KISELEV, NA ^{[1
]}

LEBEDEV, OI ^{[1
]}

VASILIEV, AL ^{[1
]}

ORLIKOVSKY, AA ^{[1
]}

VALIEV, KA ^{[1
]}

VASILIEV, AG ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST PHYS & TECHNOL,MOSCOW,RUSSIA

来源：

VACUUM | 1993年 / 44卷 / 02期

关键词：

D O I：

10.1016/0042-207X(93)90363-F

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of TiSi(x) on Si and SiO2 with different phases and structural properties obtained in one cycle were investigated by high-resolution electron microscopy (HREM). Even at relatively low temperatures the film's structure was significantly different. The optimal value for the process was found. The titanium disilicide phase formation process on Si and SiO2 near the interface regions was investigated using a TiSi(x)-SiO2/Si(100) system, in which the SiO2 layer thickness varied from a few nanometres to 200 nm. Investigations of TiSi(x) films on wedge-like SiO2 revealed a specific growth of silicide phases at SiO2 layer thickness 5 nm < d < 20 nm due to lateral diffusion of Si and film-SiO2 layer interaction.

引用

页码：143 / 150

页数：8

共 11 条

[1]

CATANA A, 1987, I PHYS C, V87

[2] PLATINUM SILICIDE STUDY FOR SUBMICRON CMOS APPLICATION - DIELECTRIC-BREAKDOWN OF GATE OXIDE AND CORRELATION WITH YIELD MODELS [J].