HIGH-TEMPERATURE SILVER ION-IMPLANTATION INTO GLASS

被引:19
作者
SKELLAND, ND
SHARP, J
TOWNSEND, PD
机构
[1] School of Mathematical and Physical Sciences, University of Sussex, Brighton
关键词
D O I
10.1016/0168-583X(94)95591-3
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Soda-lime-silicate glass has been implanted with 55 keV Ag+ ions at five different temperatures: room temperature, 100, 225, 350 and 600-degrees-C. Rutherford backscattering spectroscopy was used to provide depth profiles for the implants. All samples show a low retention of silver and this varies with temperature. In the room temperature and 100-degrees-C implants the silver diffuses to, and is lost from the surface. This also occurs in the higher temperature implants, but in these cases there is a significant amount of inward diffusion by the silver. This diffusion extends to at least 500 nm: greatly in excess of the predicted range for a standard implant. Optical measurements on the samples show that those with the inward diffusion have formed an enhanced-index waveguide.
引用
收藏
页码:446 / 450
页数:5
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