TWIN-DETERMINED GROWTH OF DIAMOND FILMS

被引：16

作者：

SHECHTMAN, D

机构：

[1] Department of Materials Engineering, Technion, Haifa

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1994年 / 184卷 / 02期

关键词：

D O I：

10.1016/0921-5093(94)91025-1

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Growth features of chemical vapor deposited diamond wafers were studied and their crystallography determined. SIGMA = 3 twins play an important role in the fast growth of diamond wafer as they enable the formation of re-entrant corners along their intersection line with the growing surface. These re-entrant corners serve as preferred nucleation sites for new planes. The facet planes at the surface were found to be either {111} or {001} and the various morphology combinations are discussed in this article.

引用

页码：113 / 118

页数：6

共 14 条

[1]

Angus J., 1989, MRS BULL, V14, P38, DOI [10.1557/S0883769400061480, DOI 10.1557/S0883769400061480]

[2] TWINNING AND FACETING IN EARLY STAGES OF DIAMOND GROWTH BY CHEMICAL VAPOR-DEPOSITION [J].