LOCAL PEELING OF PHOTORESIST FILM DURING ULTRAVIOLET-LIGHT EXPOSURE

被引:2
作者
KAWAI, A [1 ]
NAGATA, H [1 ]
MORIMOTO, H [1 ]
TAKATA, M [1 ]
机构
[1] MITSUBISHI ELECTR CORP,ULSI LAB,ITAMI,HYOGO 664,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 1B期
关键词
ADHESION; SURFACE FREE ENERGY; PEEL; PHOTORESIST; LSI; DEFECT; STRAIN; INORGANIC SUBSTRATE;
D O I
10.1143/JJAP.33.L149
中图分类号
O59 [应用物理学];
学科分类号
摘要
Circular peels are formed during exposure of the photoresist film to ultraviolet (UV) light. Dependency of peel formation in photoresist film on adhesion energy is investigated. The value of adhesion energy is derived from the measurement value of surface free energy. The surface free energy of inorganic substrates used for the investigation is between the values of 46.5 and 62.6 dyn/cm. It is found that the number of peels decreases as the adhesion energy increases. Peel formation can be explained by using the adhesion energy.
引用
收藏
页码:L149 / L151
页数:3
相关论文
共 9 条
[1]   THE STRUCTURE OF FILMS OF SILANE PRIMERS ON ALUMINUM SUBSTRATES [J].
ALLEN, KW ;
STEVENS, MG .
JOURNAL OF ADHESION, 1982, 14 (02) :137-144
[2]   FILM STRUCTURE AND ADHESION [J].
BULLETT, TR .
JOURNAL OF ADHESION, 1972, 4 (01) :73-&
[3]  
CARRE A, 1984, J ADHESION, V18, P171
[4]   ON THE DISSOLUTION OF NOVOLAK IN AQUEOUS ALKALI [J].
HUANG, JP ;
KWEI, TK ;
REISER, A .
MACROMOLECULES, 1989, 22 (10) :4106-4112
[5]   RELATIONSHIP BETWEEN FRACTURE MECHANICS AND SURFACE ENERGETICS FAILURE CRITERIA [J].
KAELBLE, DH .
JOURNAL OF APPLIED POLYMER SCIENCE, 1974, 18 (06) :1869-1889
[6]   ADHESION BETWEEN PHOTORESIST AND INORGANIC SUBSTRATE [J].
KAWAI, A ;
NAGATA, H ;
ABE, H ;
TAKATA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (01) :121-125
[7]  
LONG M, 1979, P KODAK MICROELECTRO, P125
[8]   ROLE OF INTERFACE IN ADHESION PHENOMENA [J].
MITTAL, KL .
POLYMER ENGINEERING AND SCIENCE, 1977, 17 (07) :467-473
[9]  
Miura K., 1988, Proceedings of the SPIE - The International Society for Optical Engineering, V920, P134, DOI 10.1117/12.968311