MODELING OF CHARGING EFFECTS IN PLASMA IMMERSION ION-IMPLANTATION

The charging effects of plasma immersion ion implantation on several device structures is simulated. The simulations use an analytical model which couples the interaction of the plasma and IC devices during plasma implantation. The plasma model is implemented within the circuit simulator SPICE, which allows the model to uses all of the IC device models existing within SPICE. The model of the Fowler-Nordheim tunneling current through thin gate oxides of MOS devices is demonstrated, and shown how it can be used to quantify the damage induced. Charging damage is shown to be strongly affected by the device structure.