ABSORPTION-SPECTROSCOPY STUDIES OF STRAINED INGAAS/GAAS SINGLE-QUANTUM WELLS

被引：30

作者：

SHEN, WZ ^{[1
]}

TANG, WG ^{[1
]}

SHEN, SC ^{[1
]}

WANG, SM ^{[1
]}

ANDERSSON, T ^{[1
]}

机构：

[1] CHALMERS UNIV TECHNOL, DEPT PHYS, S-41296 GOTHENBURG, SWEDEN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 21期

关键词：

D O I：

10.1063/1.112549

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Strained In0.20Ga0.80As/GaAs single-quantum well (SQW) structures with the GaAs capping layer thickness ranging from 5 to 500 nm have been studied directly by absorption spectroscopy. The absorption peaks are shifted to lower energy while the GaAs capping layer thickness decreases due to the strain relaxation in InGaAs/GaAs SQW structures induced by the GaAs capping layer. The best fit gives the conduction-band offset ratio Qc=0. 70±0.05. The pronounced exciton peaks are observed in the absorption spectra at room temperature. The strength of the exciton-phonon coupling is determined from linewidth analysis and is found to be much larger than that of strained InGaAs/GaAs MQW structures. © 1994 American Institute of Physics.

引用

页码：2728 / 2730

页数：3

共 24 条

[1] VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

ANDERSSON, TG ;

CHEN, ZG ;

KULAKOVSKII, VD ;

UDDIN, A ;

VALLIN, JT .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :752-754

[2]

BEBBS HB, 1972, SEMICONDUCT SEMIMET, V8, P256

[3] PHOTOMODULATION STUDY OF PARTIALLY STRAINED INXGA1-XAS LAYERS [J].

CHEN, JH ;

CHI, WS ;

HUANG, YS ;

YIN, Y ;

POLLAK, FH ;

PETTIT, GD ;

WOODALL, JM .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (07) :1420-1425

[4] PHOTOLUMINESCENCE IN STRAINED INGAAS-GAAS HETEROSTRUCTURES [J].

GAL, M ;

TAYLOR, PC ;

USHER, BF ;

ORDERS, PJ .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3898-3901

[5]

HELLWEGE KH, 1982, NEW SERIES GROUP 3, V179

[6] EXCITON BINDING-ENERGY IN INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS [J].

HOU, HQ ;

SEGAWA, Y ;

AOYAGI, Y ;

NAMBA, S ;

ZHOU, JM .

PHYSICAL REVIEW B, 1990, 42 (02) :1284-1289

[7] OPTICAL STUDIES OF INXGA1-XAS/GAAS STRAINED-LAYER QUANTUM WELLS [J].

HUANG, KF ;

TAI, K ;

CHU, SNG ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1989, 54 (20) :2026-2028

[8] OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS [J].

JI, G ;

HUANG, D ;

REDDY, UK ;

HENDERSON, TS ;

HOUDRE, R ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) :3366-3373

[9] PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY OF AS-GROWN AND CHEMICALLY RELEASED IN0.05GA0.95AS/GAAS QUANTUM-WELLS [J].

JOYCE, MJ ;

XU, ZY ;

GAL, M .

PHYSICAL REVIEW B, 1991, 44 (07) :3144-3149

[10] PROPERTIES OF INXGA1-XAS-GAAS STRAINED-LAYER QUANTUM-WELL-HETEROSTRUCTURE INJECTION-LASERS [J].

LAIDIG, WD ;

LIN, YF ;

CALDWELL, PJ .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (01) :33-38

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