ELECTRONIC BEHAVIORS OF GAP STATES IN AMORPHOUS-SEMICONDUCTORS

被引：55

作者：

OKAMOTO, H ^{[1
]}

HAMAKAWA, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1977年 / 24卷 / 01期

关键词：

D O I：

10.1016/0038-1098(77)90557-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：23 / 27

页数：5

共 18 条

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[2]

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[4] AMORPHOUS SILICON SOLAR-CELL [J].

CARLSON, DE ;

WRONSKI, CR .

APPLIED PHYSICS LETTERS, 1976, 28 (11) :671-673

[5]

FRITZSCHE H, 1974, AMORPHOUS LIQUID SEM, pCH5

[6] SUBSTITUTIONAL DOPING IN AMORPHOUS-SEMICONDUCTORS AS-SI SYSTEM [J].

KNIGHTS, JC .

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[7] INFLUENCE OF MN IMPURITY IN TE-AS-GE-SI GLASSES [J].

KUMEDA, M ;

JINNO, Y ;

SUZUKI, M ;

SHIMIZU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (02) :201-205

[8] INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES [J].

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1976, 34 (06) :1101-1108

[9]

MOTT NF, 1971, ELECTRONIC PROCESSES

[10]

Nunoshita M., 1973, Journal of Non-Crystalline Solids, V12, P339, DOI 10.1016/0022-3093(73)90006-9

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