GROWTH OF WIDE, FLAT CRYSTALS OF SILICON WEB

被引：38

作者：

BARRETT, DL

MYERS, EH

HAMILTON, DR

BENNETT, AI

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1971年 / 118卷 / 06期

关键词：

D O I：

10.1149/1.2408230

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：952 / &

相关论文

共 10 条

[1] DERMATIS SN, 1963, IEEE COMMUN ELECTRON, P94
[2] GERMANIUM DENDRITE STUDIES .2. LATERAL GROWTH PROCESSES
FAUST, JW
JOHN, HF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (09) : 860 - 863
[3] GROWTH MECHANISMS OF GERMANIUM DENDRITES - KINETICS AND NONISOTHERMAL INTERFACE
HAMILTON, DR
SEIDENSTICKER, RG
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1450 - &
[4] PROPAGATION MECHANISM OF GERMANIUM DENDRITES
HAMILTON, DR
SEIDENSTICKER, RG
[J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1165 - 1168
[5] DISLOCATION REACTIONS IN SILICON WEB-DENDRITE CRYSTALS
OHARA, S
SCHWUTTKE, GH
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) : 2475 - +
[6] DISLOCATIONS IN WEBS OF GERMANIUM + SILICON
OHARA, S
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 409 - &
[7] WEB GROWTH OF SEMICONDUCTORS
OHARA, S
BENNETT, AI
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (3P1) : 686 - &
[8] GROWTH MECHANISMS IN GERMANIUM DENDRITES - 3 TWIN DENDRITES - EXPERIMENTS ON AND MODELS FOR ENTIRE INTERFACE
SEIDENSTICKER, RG
HAMILTON, DR
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) : 3113 - &
[9] TUCKER TN, 1966, ELECTROCHEM TECHNOL, V4, P546
[10] GROWTH OF DISLOCATION-FREE SILICON WEB CRYSTALS
TUCKER, TN
SCHWUTTK.GH
[J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 219 - &