TEMPERATURE DEPENDENCE OF PHOTOCURRENTS PRODUCED BY X-RAYS AND GAMMA-RAYS IN SILICON RADIATION DETECTORS

被引：3

作者：

SCHARF, K

MOHR, RK

机构：

来源：

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY | 1971年 / A 75卷 / 06期

关键词：

D O I：

10.6028/jres.075A.047

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：579 / +

共 9 条

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BAILY, NA
KRAMER, G
[J]. RADIATION RESEARCH, 1964, 22 (01) : 53 - +
[2] FOWLER JF, 1966, RAD DOSIMETRY, P291
[3] LAUGHLIN JS, 1966, B AM PHYS SOC 2, V11, P4963
[4] PARKER RP, 1967, 1966 P S VIENN SOL S, P167
[5] STEADY-STATE RESPONSE OF SILICON RADIATION DETECTORS OF DIFFUSED P-N JUNCTION TYPE TO X RAYS .I. PHOTOVOLTAIC MODE OF OPERATION
SCHARF, K
SPARROW, JH
[J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1964, A 68 (06): : 683 - +
[6] STEADY-STATE RESPONSE OF SILICON RADIATION DETECTORS OF DIFFUSED P-N JUNCTION TYPE TO X RAYS .2. PHOTODIODE MODE OF OPERATION
SCHARF, K
SPARROW, JH
[J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1966, A 70 (02): : 181 - +
[7] EXPOSURE RATE MEASUREMENTS OF X- AND GAMMA-RAYS WITH SILICON RADIATION DETECTORS
SCHARF, K
[J]. HEALTH PHYSICS, 1967, 13 (06): : 575 - +
[8] A P-N JUNCTION PHOTOVOLTAIC DETECTOR FOR USE IN RADIOTHERAPY
WHELPTON, D
WATSON, BW
[J]. PHYSICS IN MEDICINE AND BIOLOGY, 1963, 8 (1-4) : 33 - &
[9] WHITE GN, 1959, PRINCIPLES RADIATION, P62