MICROSTRUCTURE AND RECORDING PROPERTIES OF BICRYSTAL DISKS WITH GAAS SUBSTRATES

被引:11
作者
DING, JR
ZHU, JG
机构
[1] MINT, Department of Electrical Engineering, University of Minnesota, MPLS
基金
美国国家科学基金会;
关键词
D O I
10.1109/20.333963
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Bicrystal disks with CoCrTa magnetic layer and Cr underlayer were fabricated on {001} GaAs single crystalline wafers. It is found that the epitaxial orientation relationship of Cr onto GaAs is {001}<110> Cr // {001}<110> GaAs. Disks with coercivity up to 2600 Oe, accompanied by near unity coercive and remanent squarenesses, were obtained. Measured medium noise power is extremely low and remains unchanged as recording density increases up to 4000 fr/mm. The recording properties of the bicrystal media are compared with those of conventional longitudinal thin film media which have similar coercivities.
引用
收藏
页码:3978 / 3980
页数:3
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