EXTERNAL NEGATIVE CONDUCTANCE OF A SEMICONDUCTOR WITH NEGATIVE DIFFERENTIAL MOBILITY

被引：27

作者：

KROEMER, H

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1965年 / 53卷 / 09期

关键词：

D O I：

10.1109/PROC.1965.4193

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1246 / &

共 8 条

[1]

DAY GF, 1965, B AM PHYS SOC, V10, P383

[2] INSTABILITIES OF CURRENT IN 3-V SEMICONDUCTORS [J].

GUNN, JB .

[3]

GUNN JB, 1964, S PLASMA EFFECTS SOL

[4]

HAKKI BW, TO BE PUBLISHED

[5] THEORY OF GUNN EFFECT [J].

KROEMER, H .

[6]

KROEMER H, TO BE PUBLISHED

[7] SPECIFIC NEGATIVE RESISTANCE IN SOLIDS [J].

RIDLEY, BK .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (530) :954-&

SHOCKLEY, W .

BELL SYSTEM TECHNICAL JOURNAL, 1954, 33 (04) :799-826