Electrical conduction and recrystallization in thin Pb films deposited at low temperatures

被引：6

作者：

Armi, EL

机构：

[1] CALTECH, Norman Bridge Lab Phys, Pasadena, CA USA

[2] CALTECH, Cryogen Lab, Pasadena, CA USA

来源：

PHYSICAL REVIEW | 1943年 / 63卷 / 11/12期

关键词：

D O I：

10.1103/PhysRev.63.451

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：0451 / 0454

页数：4

共 7 条

[1] ANDERSON ABC, 1933, THESIS
[2] ANDERSON ABC, 1934, PHYS REV, V45, P293
[3] Conductivity and mobility of thin lead films
Foster, MG
[J]. PHYSICAL REVIEW, 1940, 57 (01): : 42 - 46
[4] FOSTER MG, 1939, THESIS
[5] JOHNSON MC, 1933, P ROY SOC, V40, P126
[6] The irreversible changes of the electrical resistance of the mid light reflectivity of low temperature condensed antimony, Arson, tellurium, iron and silver layers
Suhrmann, R.
Berndt, W.
[J]. ZEITSCHRIFT FUR PHYSIK, 1940, 115 (1-2): : 17 - 46
[7] Electrical conductance and photoelectric emission of thin bismuth films
Weber, AH
O Brien, DF
[J]. PHYSICAL REVIEW, 1941, 60 (08): : 574 - 578