PRESSURE AND TEMPERATURE DEPENDENCE OF ABSORPTION EDGE IN GAN

[1] SIMPLIFIED LCAO METHOD FOR ZINCBLENDE, WURTZITE, AND MIXED CRYSTAL STRUCTURES [J]. PHYSICAL REVIEW, 1959, 115 (06): : 1493 - 1505

[2] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (04) : 184 - +

[3] OPTICAL PROPERTIES AND BAND STRUCTURE OF WURTZITE-TYPE CRYSTALS AND RUTILE [J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1467 - +

[4] COHEN ML, 1967, 2 6 SEMICONDUCTING C, P462

[5] ELECTROABSORPTION IN SEMICONDUCTORS - EXCITONIC ABSORPTION EDGE [J]. PHYSICAL REVIEW B, 1970, 1 (08): : 3358 - &

[6] EXPERIMENTAL OBSERVATION OF EXCITONIC MOLECULE [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (16) : 860 - &

[7] OPTICAL ABSORPTION AND VACUUM-ULTRAVIOLET REFLECTANCE OF GAN THIN FILMS [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (25) : 1421 - &

[8] KOSICKI BB, 1967, HP19 DIV ENG APPL PH

[9] OPTICAL STUDIES OF PHONONS AND ELECTRONS IN GALLIUM NITRIDE [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (15) : 1227 - +

[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &

[1] SIMPLIFIED LCAO METHOD FOR ZINCBLENDE, WURTZITE, AND MIXED CRYSTAL STRUCTURES [J]. PHYSICAL REVIEW, 1959, 115 (06): : 1493 - 1505

[2] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND [J]. PHYSICAL REVIEW LETTERS, 1971, 26 (04) : 184 - +

[3] OPTICAL PROPERTIES AND BAND STRUCTURE OF WURTZITE-TYPE CRYSTALS AND RUTILE [J]. PHYSICAL REVIEW, 1965, 137 (5A): : 1467 - +

[4] COHEN ML, 1967, 2 6 SEMICONDUCTING C, P462

[5] ELECTROABSORPTION IN SEMICONDUCTORS - EXCITONIC ABSORPTION EDGE [J]. PHYSICAL REVIEW B, 1970, 1 (08): : 3358 - &

[6] EXPERIMENTAL OBSERVATION OF EXCITONIC MOLECULE [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (16) : 860 - &

[7] OPTICAL ABSORPTION AND VACUUM-ULTRAVIOLET REFLECTANCE OF GAN THIN FILMS [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (25) : 1421 - &

[8] KOSICKI BB, 1967, HP19 DIV ENG APPL PH

[9] OPTICAL STUDIES OF PHONONS AND ELECTRONS IN GALLIUM NITRIDE [J]. SOLID STATE COMMUNICATIONS, 1970, 8 (15) : 1227 - +

[10] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &