CMOS OTA-C HIGH-FREQUENCY SINUSOIDAL OSCILLATORS

被引：44

作者：

LINARES-BARRANCO, B ^{[1
]}

RODRIGUEZVAZQUEZ, A ^{[1
]}

SANCHEZ-SINENCIO, E ^{[1
]}

HUERTAS, JL ^{[1
]}

机构：

[1] UNIV SEVILLA, CTR NACL MICROELECTR, DEPT DISENO ANALOG, E-41012 SEVILLE, SPAIN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1991年 / 26卷 / 02期

关键词：

Amplifiers; Operational - Integrated Circuits; CMOS--Design;

D O I：

10.1109/4.68133

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Several topology families are given to implement practical CMOS sinusoidal oscillators by using operational transconductance amplifier-capacitor (OTA-C) techniques. Design techniques are proposed taking into account the CMOS OTA's dominant nonidealities. Building blocks are presented for amplitude control, both by AGC schemes and by limitation schemes. Experimental results from 3- and 2-mu-m CMOS (MOSIS) prototypes showing oscillation frequencies up to 69 MHz are obtained. The amplitudes can be adjusted between 1 V peak to peak and 100 mV peak to peak. Total harmonic distortions from 2.8% down to 0.2% have been experimentally measured in the laboratory.

引用

页码：160 / 165

页数：6

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