UNDOPED AND CHROMIUM-DOPED SEMIINSULATING GAAS PHOTOCONDUCTIVE DETECTORS

被引：3

作者：

SCHUMM, G

PLANT, TK

机构：

来源：

SOLID-STATE ELECTRONICS | 1987年 / 30卷 / 01期

关键词：

D O I：

10.1016/0038-1101(87)90038-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：109 / 112

页数：4

共 15 条

[1] ON THE RESPONSE BEHAVIOR OF FAST PHOTOCONDUCTIVE OPTICAL PLANAR AND COAXIAL SEMICONDUCTOR-DETECTORS [J].

BENEKING, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) :1431-1441

[2] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[3] SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].

CHANG, CY ;

FANG, YK ;

SZE, SM .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&

[4] A PHOTOCONDUCTIVE DETECTOR FOR HIGH-SPEED FIBER COMMUNICATION [J].

GAMMEL, JC ;

METZE, GM ;

BALLANTYNE, JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :841-849

[5] INTEGRATED PHOTOCONDUCTIVE DETECTOR AND WAVE-GUIDE STRUCTURE [J].

GAMMEL, JC ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :149-151

[6]

GAMMEL JC, 1978, IEDM TECH DIG, P120

[7]

GAMMEL JC, 1980, MSC4282 MAT SCI CTR

[8]

KLEIN HJ, 1981, I PHYS C SER, V56, P379

[9]

LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904

[10] PHOTOELECTRONIC PROPERTIES OF HIGH-RESISTIVITY GAAS-CR [J].

LIN, AL ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (05) :1859-1867

← 1 2 →