COMPUTER-SIMULATION OF CHANNELING MEASUREMENTS ON V3SI SINGLE-CRYSTALS

A computer program has been developed to simulate the channelling process of He-ions in V//3Si with A15 crystal structure. The program considers the anisotropy of the thermal vibrations of the V-atoms and takes into account the interactions of an ion with all neighbored atoms in a plane. Angular scan curves through the left bracket 100 right bracket - and the left bracket 110 right bracket -channelling directions in the V- and the Si-sublattices are calculated with this computer program and found to be in good agreement with measured values. Calculated depth dependences of the critical angle and the minimum yield are in reasonable agreement with the measured results. Analytical treatments have also been applied but fail to describe the measured data.