ISOMER-SHIFTS OF I-129 IMPURITIES IMPLANTED IN SEMICONDUCTORS - COMMENT

被引：3

作者：

ANTONCIK, E

机构：

[1] Institute of Physics, University of Aarhus, Aarhus C

来源：

HYPERFINE INTERACTIONS | 1979年 / 7卷 / 04期

关键词：

D O I：

10.1007/BF01021514

中图分类号：

O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];

学科分类号：

070203 ; 070304 ; 081704 ; 1406 ;

摘要：

De Waard, Bukshpan and Kemerink have recently measured the isomer shift of129I impurities implanted in semiconductors. It is a gued here that a simple interpretation of these measurements can be given based on the electron structure of both the host materials and the implanted atoms. © 1979 North-Holland Publishing Company.

引用

页码：319 / 322

页数：4

共 9 条

[1] Antoncik E., 1976, Hyperfine Interactions, V1, P329
[2] CALIBRATION OF ISOMER-SHIFT FOR SN-119
ANTONCIK, E
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 79 (02): : 605 - 611
[3] ANTONCIK E, UNPUBLISHED
[4] HU SM, 1973, ATOMIC DIFFUSION SEM, P261
[5] PANTELIDES ST, 1978, PHYS REV B, V12, P2543
[6] Ruby S. L., 1978, Mossbauer isomer shifts, P617
[7] VETELINO JF, 1969, PHYS REV, V178, P1439
[8] WAARD HD, 1977, HYP INT, V5, P45
[9] WAARD HD, 1974, MOSSBAUER EFFECT DAT, P447

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