DEFECT SPECIFIC TEMPERATURE-DEPENDENCE OF POSITRON TRAPPING

被引：21

作者：

MANTL, S ^{[1
]}

KESTERNICH, W ^{[1
]}

TRIFTSHAUSER, W ^{[1
]}

机构：

[1] HSCH BUNDESWEHR MUNCHEN,D-8014 NEUBIBERG,FED REP GER

来源：

JOURNAL OF NUCLEAR MATERIALS | 1978年 / 69-7卷 / 1-2期

关键词：

D O I：

10.1016/0022-3115(78)90285-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：593 / 595

页数：3

共 11 条

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[9] TEMPERATURE INDEPENDENCE OF POSITRON TRAPPING BY VACANCIES IN GOLD [J].

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[10] POSITRON-ANNIHILATION STUDY OF VOIDS IN A NEUTRON-IRRADIATED ALUMINUM SINGLE-CRYSTAL [J].

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