PARTIAL PHASE-DIAGRAM OF THE SYSTEM SC-RH-SI

被引：6

作者：

BRAUN, HF ^{[1
]}

BURRI, G ^{[1
]}

RINDERER, L ^{[1
]}

机构：

[1] UNIV LAUSANNE,INST PHYS EXPTL,CH-1015 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF THE LESS-COMMON METALS | 1979年 / 68卷 / 01期

关键词：

D O I：

10.1016/0022-5088(79)90281-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The silicon-rich part of the scandium-rhodium-silicon system has been investigated at 800, 1000 and 1150 °C. At 1000 °C, nine ternary phases have been found with silicon contents higher than 44 at.%. From X-ray data and microprobe analysis a phase diagram has been constructed. © 1979.

引用

页码：P1 / P8

页数：8

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