INSITU OXYGEN CONDITIONING OF (001) MGO THIN-FILM SUBSTRATES FOR FILM GROWTH-STUDIES BY ELECTRON-MICROSCOPY

被引：9

作者：

MOORHEAD, RD

POPPA, H

机构：

[1] Stanford-National Aeronautics and Space Admin. Joint Inst. for Surface and Microstructural Research, Ames Research Center, National Aeronautics and Space Administration, Moffett Field

来源：

THIN SOLID FILMS | 1979年 / 58卷 / 01期

关键词：

D O I：

10.1016/0040-6090(79)90232-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

It was found that the in situ treatment of (001) single-crystal films of MgO (prepared by epitaxial growth from the vapor phase) at high temperatures with a jet of oxygen will produce a surface that is almost equivalent, for epitaxial studies, to surfaces with the same orientation prepared by vacuum cleavage of bulk single crystals. The effectiveness of the process is demonstrated by its impact on the epitaxy of silver. © 1979.

引用

页码：169 / 173

页数：5