CRYSTALLINE STRUCTURE OF GERMANIUM FILMS ON SILICON SUBSTRATES .1. INVESTIGATION OF PERFECTION OF GERMANIUM HETEROEPITAXIAL FILMS ON SILICON BY X-RAY DIFFRACTION METHODS

被引:13
作者
DATSENKO, LI
GUREEV, AN
KOROTKEVICH, NF
SOLDATENKO, NN
TKHORIK, YA
机构
关键词
D O I
10.1016/0040-6090(71)90030-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:117 / +
页数:1
相关论文
共 6 条
[1]   EFFECT OF CRYSTAL PERFECTION AND POLARITY ON ABSORPTION EDGES SEEN IN BRAGG DIFFRACTION [J].
COLE, H ;
STEMPLE, NR .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (07) :2227-&
[2]   EFFECT OF DISLOCATIONS ON INTENSITY JUMPS AT INTERFERENTIAL TRANSMISSION OF X-RAYS NEAR K-EDGE OF ABSORPTION IN GE [J].
DATSENKO, LI ;
SKOROKHO.MY ;
VASILKOV.AS .
PHYSICA STATUS SOLIDI, 1968, 30 (01) :231-&
[3]  
EFIMOV O, 1968, FIZ TVERD TELA, V10, P2234
[4]   INTEGRAL CHARACTERISTICS OF ANOMALOUS TRANSMISSION OF X-RAYS [J].
EFIMOV, ON ;
KOVEV, EK .
PHYSICA STATUS SOLIDI, 1966, 17 (01) :397-&
[5]  
Zakharov BG., 1966, KRISTALLOGRAFIYA, V11, P227
[6]  
1965, SPRAVOCHNIK REDKIM M, P338