STRETCHED-EXPONENTIAL DECAY LAWS OF GENERAL DEFECT DIFFUSION-MODELS

被引：3

作者：

ITO, HM

OGURA, Y

TOMISAKI, M

机构：

[1] SAGA UNIV, FAC SCI, DEPT MATH, SAGA 840, JAPAN

[2] NARA WOMENS UNIV, FAC SCI, DEPT MATH, NARA 630, JAPAN

来源：

JOURNAL OF STATISTICAL PHYSICS | 1992年 / 66卷 / 1-2期

关键词：

STRETCHED-EXPONENTIAL; RELAXATION; DEFECT DIFFUSION;

D O I：

10.1007/BF01060081

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We calculate a correlation function of a dipole which flips upon contact with one of the defects making generally non-Gaussian diffusions. Other than the memory effect in the fractal random walk model, the non-Gaussian property can be an origin of the stretched-exponential law of the correlation function.

引用

收藏

页码：563 / 582

页数：20

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