OBSERVATION OF VACANCY TYPE DEFECTS IN GA-DOPED ZNSE USING A MONOENERGETIC POSITRON BEAM

被引：21

作者：

MIYAJIMA, T ^{[1
]}

OKUYAMA, H ^{[1
]}

AKIMOTO, K ^{[1
]}

MORI, Y ^{[1
]}

WEI, L ^{[1
]}

TANIGAWA, S ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 12期

关键词：

D O I：

10.1063/1.105294

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied vacancy type defects in Ga-doped ZnSe films grown by molecular beam epitaxy using an energy-variable monoenergetic positron beam. We found that the concentration of negative charged vacancies, such as Zn vacancies, increases as the Ga atom concentration increases. This result indicates that the doping by Ga atoms induces the formation of Zn vacancies in a ZnSe film. We believe that these defects will cause the saturation of active carriers in n-type ZnSe films.

引用

页码：1482 / 1484

页数：3

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