PUNCH-THROUGH CURRENTS IN P+NP+ AND N+PN+ SANDWICH STRUCTURES .1. INTRODUCTION AND BASIC CALCULATIONS

被引:28
作者
LOHSTROH, J
KOOMEN, JJM
VANZANTEN, AT
SALTERS, RHW
机构
关键词
D O I
10.1016/0038-1101(81)90095-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:805 / 814
页数:10
相关论文
共 48 条
[1]  
ADIROVICH EI, 1958, SOV PHYS-TECH PHYS, V3, P49
[2]  
BARNES J, 1979, IEEE J SOLID ST APR, P368
[3]  
Butler W. J., 1976, International Electron Devices Meeting. (Technical digest), P587
[4]   THERMIONIC INJECTION AND SPACE-CHARGE-LIMITED CURRENT IN REACH-THROUGH P+NP+ STRUCTURES [J].
CHU, JL ;
SZE, SM ;
PERSKY, G .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3510-&
[5]  
COBBOLD RSC, 1964, P IEEE NOV, P1375
[6]   SPACE-CHARGE LIMITED HOLE CURRENT IN GERMANIUM [J].
DACEY, GC .
PHYSICAL REVIEW, 1953, 90 (05) :759-763
[7]   PURE SPACE-CHARGE-LIMITED ELECTRON CURRENT IN SILICON [J].
DENDA, S ;
NICOLET, MA .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (06) :2412-&
[8]   3 MASK BIPOLAR INTEGRATED-CIRCUIT STRUCTURE [J].
GLINSKI, VJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (02) :182-&
[9]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[10]   THEORY OF SWITCHING IN P-N-INSULATOR (TUNNEL)-METAL DEVICES .1. PUNCHTHROUGH MODE [J].
HABIB, SED ;
SIMMONS, JG .
SOLID-STATE ELECTRONICS, 1979, 22 (02) :181-192