A NEW DEGRADATION PHENOMENON IN BLUE-LIGHT EMITTING SILICON-CARBIDE DIODES

被引:10
作者
ZIEGLER, G
THEIS, D
机构
关键词
D O I
10.1109/T-ED.1981.20359
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:425 / 427
页数:3
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共 8 条
[1]   SILICON-CARBIDE ELECTROLUMINESCENT DEVICES [J].
BRANDER, RW .
PROCEEDINGS OF THE INSTITUTION OF ELECTRICAL ENGINEERS-LONDON, 1969, 116 (03) :329-&
[2]  
KURZINGER W, 1978, IEEE LED SPECIALIST
[3]   X-RAY-DIFFRACTION STUDY OF STACKING-FAULTS IN A SINGLE-CRYSTAL OF 2HSIC [J].
PANDEY, D ;
KRISHNA, P .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1977, 10 (15) :2057-&
[4]  
PANDEY D, 1973, SILICON CARBIDE, P198
[5]  
PETTENPAUL E, 1980, 53 INT PHYS C SER, P21
[6]   LOW-TEMPERATURE SOLID-STATE PHASE-TRANSFORMATION IN 2H SILICON-CARBIDE [J].
POWELL, JA ;
WILL, HA .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) :1400-&
[7]  
Wilson A.JC, 1949, XRAY OPTICS
[8]   MECHANICAL-STRESS-INDUCED DEGRADATION IN HOMOJUNCTION GAAS LEDS [J].
ZAESCHMAR, G ;
SPEER, RS .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) :5686-5690