THE BIPOLAR SPIN TRANSISTOR

被引：18

作者：

JOHNSON, M ^{[1
]}

机构：

[1] BELLCORE,RED BANK,NJ 07701

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1995年 / 140卷

关键词：

D O I：

10.1016/0304-8853(94)00589-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The spin injection technique has been adapted to a thin film, ferromagnetic-nonmagnetic-ferromagnetic metal (F1-N-F2) trilayer geometry. The result is a three terminal, current biased device with a bipolar voltage (or current) output that depends on the orientation of the magnetizations of F1 and F2. This is an active device driven by a thermodynamic force associated with the effective Zeeman energy of the spin-polarized conduction electrons in the nonmagnetic layer.

引用

页码：21 / 24

页数：4

共 19 条

[1]

ARONOV AG, 1976, JETP LETT+, V24, P32

[2]

ARONOV AG, 1976, PISMA ZH EXP TEOR FI, V0024, P00037

[3] INELASTIC LIFETIME OF THE CONDUCTION ELECTRONS IN SOME NOBLE-METAL FILMS [J].