TEMPERATURE-DEPENDENCE OF DYNAMIC CONDUCTIVITY OF ELECTRONS IN SURFACE INVERSION LAYER OF SEMICONDUCTING SILICON

被引：30

作者：

GANGULY, AK

TING, CS

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] UNIV HOUSTON,DEPT PHYS,HOUSTON,TX 77044

来源：

PHYSICAL REVIEW B | 1977年 / 16卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.16.3541

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：3541 / 3545

页数：5

相关论文

共 19 条

[1] FREQUENCY-DEPENDENCE OF SURFACE CYCLOTRON-RESONANCE IN SI
ABSTREITER, G
KOCH, JF
GOY, P
COUDER, Y
[J]. PHYSICAL REVIEW B, 1976, 14 (06): : 2494 - 2497
[2] CYCLOTRON-RESONANCE OF ELECTRONS IN AN INVERSION LAYER ON SI
ABSTREITER, G
KNESCHAUREK, P
KOTTHAUS, JP
KOCH, JF
[J]. PHYSICAL REVIEW LETTERS, 1974, 32 (03) : 104 - 107
[3] FAR-INFRARED CYCLOTRON-RESONANCE IN INVERSION LAYER OF SILICON
ALLEN, SJ
TSUI, DC
DALTON, JV
[J]. PHYSICAL REVIEW LETTERS, 1974, 32 (03) : 107 - 110
[4] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES
ANDERSON, PW
[J]. PHYSICAL REVIEW, 1958, 109 (05): : 1492 - 1505
[5] THEORY OF OSCILLATORY G-FACTOR IN AN MOS INVERSION LAYER UNDER STRONG MAGNETIC-FIELDS
ANDO, T
UEMURA, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 37 (04) : 1044 - 1052
[6] MASS ENHANCEMENT AND SUBHARMONIC STRUCTURE OF CYCLOTRON-RESONANCE IN AN INTERACTING 2-DIMENSIONAL ELECTRON-GAS
ANDO, T
[J]. PHYSICAL REVIEW LETTERS, 1976, 36 (23) : 1383 - 1385
[7] Chaplik A. V., 1972, Soviet Physics - JETP, V35, P395
[8] HOMOGENEOUS DYNAMICAL CONDUCTIVITY OF SIMPLE METALS
GOTZE, W
WOLFLE, P
[J]. PHYSICAL REVIEW B, 1972, 6 (04): : 1226 - &
[9] FREQUENCY-DEPENDENT CYCLOTRON EFFECTIVE MASSES IN SI INVERSION LAYERS
KENNEDY, TA
WAGNER, RJ
MCCOMBE, BD
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (15) : 1031 - 1034
[10] KENNEDY TA, 1977, B AM PHYS SOC, V22, P304