NONISOTHERMAL CONDUCTION IN INDIUM ANTIMONIDE WITH ORTHOGONAL ELECTRIC AND MAGNETIC FIELDS

被引:13
作者
KING, JE
机构
[1] Microwave Department, Royal Institute of Technology, Stockholm
关键词
D O I
10.1063/1.1657394
中图分类号
O59 [应用物理学];
学科分类号
摘要
A nonisothermal analysis of dc conduction in n- and p-type indium antimonide subjected to orthogonal electric and magnetic fields has been developed including the effects of energy-dependent acoustic phonon and polar optical phonon scattering as well as minority carrier drift. Also, included are carrier generation, based on an equilibrium between carrier densities and particle temperatures, magnetoresistive effects and carrier injection. Threshold microwave emission curves are calculated assuming that a minimum minority carrier density is required to observe shot noise. The threshold curves give general agreement with the experimental results. When the distortion of the field due to the Hall effect is included, excellent agreement between theoretical and experimental curves is obtained. © 1970 The American Institute of Physics.
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页码:5350 / &
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