A STUDY OF PB VACANCIES AND PB-O VACANCY PAIRS IN DOPED PB0.85SR0.15(ZR0.55TI0.45)O3 CERAMICS BY POSITRON-ANNIHILATION

被引：24

作者：

DAI, GH

LU, PW

HUANG, XY

LIU, QS

XUE, WR

机构：

[1] Department of Basic Science, Nanjing Institute of Chemical Technology, Nanjing

[2] Department of Silicate Technology, Nanjing Institute of Chemical Technology, Nanjing

[3] Department of Physics, Nanjing University, Nanjing

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 1991年 / 2卷 / 03期

关键词：

D O I：

10.1007/BF00696293

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Positron annihilation spectroscopy has been used to study the formation and complex of Pb and O vacancies in polycrystalline Pb0.85Sr0.15(Zr0.55Ti0.45)O3 (PSZT) ceramics with various amounts of Mn and (Sb, Nb) dopants, fabricated from mixed-oxide powders. The results suggest that the positron may be trapped by V(Pb) vacancies and V(Pb)-V(o) pairs in PSZT with characteristic lifetimes of 305 +/- 6 and 379 +/- 15 ps, respectively. Doped Mn3+/2+ ions are assumed to substitute for (Zr, Ti)4+ in the perovskite (ABO3) lattice and V(o) vacancies were created for charge compensation. V(Pb) vacancies were generated when partial Sb3+ entered the Pb2+ site or certain amounts of Sb5+ occupied the B site. Impurity ions serving as acceptors or donors significantly affect the conduction process and dielectric and piezoelectric behaviour which could be accounted for by the defect structures of PSZT seen by the positron.

引用

页码：164 / 170

页数：7

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