VEPFIT APPLIED TO DEPTH PROFILING PROBLEMS

被引：285

作者：

VANVEEN, A ^{[1
]}

SCHUT, H ^{[1
]}

CLEMENT, M ^{[1
]}

DENIJS, JMM ^{[1
]}

KRUSEMAN, A ^{[1
]}

IJPMA, MR ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL,DIMES,2600 GB DELFT,NETHERLANDS

来源：

APPLIED SURFACE SCIENCE | 1995年 / 85卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)00334-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The modelling and fitting program VEPFIT has been employed in recent years for resolving defect depth profiles and depth structures of deposited layers. Recent activities concerning program development include the testing of a new model of MOS systems for implementation into VEPFIT and a study into decomposition of Doppler-broadened photo-peaks. Further methods are proposed using VEPFIT for analysis of lifetime measurements and for modelling of positron transport with multi-energy groups.

引用

页码：216 / 224

页数：9

共 20 条

[1] SIMPLE SCALING LAW FOR POSITRON STOPPING IN MULTILAYERED SYSTEMS [J].