HETEROEPITAXIAL GROWTH OF GAAS ON GARNETS

被引:15
作者
HAISMA, J
KOEK, BH
MAES, JWF
MATEIKA, D
PISTORIUS, JA
ROKSNOER, PJ
机构
[1] Nederlandse Philipsbedrijven BV, Eindhoven, Neth, Nederlandse Philipsbedrijven BV, Eindhoven, Neth
关键词
D O I
10.1016/0022-0248(87)90312-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
SEMICONDUCTING GALLIUM ARSENIDE
引用
收藏
页码:466 / 469
页数:4
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[2]   GROWTH OF GAINAS-INP MULTIQUANTUM WELLS ON GARNET (GGG = GD3GA5O12) SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
RAZEGHI, M ;
MEUNIER, PL ;
MAUREL, P .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (06) :2261-2263
[3]  
WINKLER G, 1981, VIEWEG TRACTS PURE A