NONLINEAR ELECTRONIC TRANSPORT IN SEMICONDUCTOR SYSTEMS WITH 2 TYPES OF CARRIERS - APPLICATION TO GAAS

被引：30

作者：

LEI, XL

XING, DY

LIU, M

TING, CS

BIRMAN, JL

机构：

[1] CUNY CITY COLL,DEPT PHYS,NEW YORK,NY 10031

[2] UNIV HOUSTON,DEPT PHYS,HOUSTON,TX 77004

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.36.9134

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：9134 / 9141

页数：8

共 15 条

[1]

Conwell E M, 1967, HIGH FIELD TRANSPORT

[2] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[3] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS [J].

GUNN, JB .

SOLID STATE COMMUNICATIONS, 1963, 1 (04) :88-91

[4] ELECTRON-DRIFT VELOCITY IN GAAS USING A VARIABLE FREQUENCY MICROWAVE TIME-OF-FLIGHT TECHNIQUE [J].

HILL, G ;

ROBSON, PN .

SOLID-STATE ELECTRONICS, 1982, 25 (07) :589-597

[5] ELECTRON-DRIFT VELOCITY IN N-GAAS AT HIGH ELECTRIC-FIELDS [J].

HOUSTON, PA ;

EVANS, AGR .

SOLID-STATE ELECTRONICS, 1977, 20 (03) :197-204

[6] GREEN-FUNCTION APPROACH TO NONLINEAR ELECTRONIC TRANSPORT FOR AN ELECTRON-IMPURITY-PHONON SYSTEM IN A STRONG ELECTRIC-FIELD [J].

LEI, XL ;

TING, CS .

PHYSICAL REVIEW B, 1985, 32 (02) :1112-1132

[7] BALANCE-EQUATIONS IN NONLINEAR ELECTRONIC TRANSPORT FOR ELECTRON PHONON IMPURITY SYSTEMS IN THE PRESENCE OF CROSSED ELECTRIC AND MAGNETIC-FIELDS [J].

LEI, XL ;

CAI, W ;

TING, CS .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (22) :4315-4326

[8] VELOCITY-FIELD CHARACTERISTICS OF GAAS WITH GAMMA-6(C)-L6(C)-X6(C) CONDUCTION-BAND ORDERING [J].

LITTLEJOHN, MA ;

HAUSER, JR ;

GLISSON, TH .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4587-4590

[9] DIFFUSION-COEFFICIENT OF HOT-ELECTRONS IN GAAS [J].

POZELA, J ;

REKLAITIS, A .

SOLID STATE COMMUNICATIONS, 1978, 27 (11) :1073-1077

[10]

REGGIANI L, 1985, HOT ELECTRON TRANSPO

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