MEMORY DEVICE USING A CONDUCTING POLYMER AND SOLID POLYMER ELECTROLYTE

被引：27

作者：

KANETO, K

ASANO, T

TAKASHIMA, W

机构：

[1] Department of Computer Science and Electronics, Kyushu Institute of Technology, Iizuka, Fukuoka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2A期

关键词：

CONDUCTING POLYMER; SOLID POLYMER ELECTROLYTE; DOPING; TRANSISTOR; ERASABLE MEMORY;

D O I：

10.1143/JJAP.30.L215

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electrically erasable memory device is fabricated using a conducting polymer and solid polymer electrolyte. The conductivity of the memory channel consisting of the conducting polymer is controlled by electrochemical doping through the counter (writing) electrode. The channel conductivity was varied by the number of writing or erasing pulses by 3-4 orders of magnitude.

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页码：L215 / L217

页数：3

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