LIGHT-INDUCED EFFECTS IN GAAS-FETS

被引：30

作者：

GRAFFEUIL, J

ROSSEL, P

MARTINOT, H

机构：

[1] Laboratoire d'Automatique et d'Analyse des Systèmes, Centre National de la Recherche Scientifique, 31400 Toulouse, 7, avenue du Colonel Roche

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 14期

关键词：

Schottky-gate field-effect transistors;

D O I：

10.1049/el:19790315

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown theoretically and experimentally that the variations of the d.c. and dynamic properties in a GaAs f.e.t. when a light beam strikes the transistor's gate can be accounted for by an appropriate change in the gate-junction equivalent built-in voltage. A simple relationship connects this change with the variations of the light intensity. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：439 / 441

页数：3