ULTRAFAST METAL-SEMICONDUCTOR-METAL PHOTODIODES FABRICATED ON LOW-TEMPERATURE GAAS

被引：42

作者：

KLINGENSTEIN, M ^{[1
]}

KUHL, J ^{[1
]}

NOTZEL, R ^{[1
]}

PLOOG, K ^{[1
]}

ROSENZWEIG, J ^{[1
]}

MOGLESTUE, C ^{[1
]}

HULSMANN, A ^{[1
]}

SCHNEIDER, J ^{[1
]}

KOHLER, K ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 05期

关键词：

D O I：

10.1063/1.106574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaAs metal-semiconductor-metal photodiodes fabricated on GaAs grown at low substrate temperatures (200-degrees-C) have been investigated in the time domain by electro-optic sampling. It could be shown that these diodes have a faster response, a considerably reduced long time tail, and can be used at larger bias than comparable diodes produced on GaAs grown at 700-degrees-C. Temperature-dependent measurements show that the tail can be described by hopping conductivity and disappears below 50 K.

引用

页码：627 / 629

页数：3

共 15 条

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