STRAINED INGAAS/GAAS SINGLE QUANTUM-WELL LASERS WITH SATURABLE ABSORBERS FABRICATED BY QUANTUM-WELL INTERMIXING

被引：22

作者：

YAMADA, N

HARRIS, JS

机构：

[1] Solid State Laboratory, Stanford University, Stanford

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 20期

关键词：

D O I：

10.1063/1.106934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report successful intermixing of strained InGaAs/GaAs quantum wells utilizing SiO2 with rapid thermal annealing and application of this technique to create a strained InGaAs single quantum well (SQW) laser with a monolithic saturable absorber section. The InGaAs SQW in the gain section was blue-shifted relative to that in the absorber section to obtain strong absorption and its saturation. The output power of the device jumps abruptly to a level higher than 10 mW when the dc injection current reaches the threshold of 58 mA. Gain-switched pulses have pulsewidth of 34.4 ps and high peak power of 330 mW.

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页码：2463 / 2465

页数：3

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