THE BEHAVIOR OF CHROMIUM IONS IN FORSTERITE

被引：41

作者：

YAMAGUCHI, Y

YAMAGISHI, K

NOBE, Y

机构：

[1] Mitsui Mining and Smelting Co. Ltd., Ageo, Saitama, 362, 1333-2, Haraichi

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 128卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(07)80085-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown chromium-doped forsterite (Mg2SiO4) varying growth atmosphere and chromium concentration in the melt in an effort to increase tetravalent chromium absorption. Additionally, samples have been annealed under atmospheres of different oxygen partial pressures. The absorption intensity was gradually saturated in two ways, by increased chromium concentration in the melt or by changing growth oxygen partial pressure. Our results show that the tetravalent chromium ion is able to migrate between silicon site and magnesium site.

引用

页码：996 / 1000

页数：5

共 12 条

[1]

ANDERSSON K, 1989, GRAIN BOUNDARIES STR, P399

[2]

ANDRSSON K, 1987, ADV CERAM, V23, P399

[3] CZOCHRALSKI GROWTH OF SINGLE-CRYSTAL MG2SIO4 (FORSTERITE) [J].