AB-INITIO STUDY OF HIGH-PRESSURE PHASE-TRANSITION IN GAN

被引:87
作者
PANDEY, R
JAFFE, JE
HARRISON, NM
机构
[1] PACIFIC NW LAB, MOLEC SCI RES CTR, RICHLAND, WA 99352 USA
[2] SERC, DARESBURY LAB, WARRINGTON WA4 4AD, CHESHIRE, ENGLAND
关键词
SEMICONDUCTOR; AB INITIO CALCULATOR; HIGH PRESSURE; PHASE TRANSITION;
D O I
10.1016/0022-3697(94)90221-6
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The total energy of GaN as a function of unit cell volume has been calculated for the wurtzite, zinc-blende, and rocksalt phases by the ab initio all-electron periodic Hartree-Fock method. The gallium 3d levels were treated as fully relaxed band states, and the internal coordinates c/a and u in the wurtzite phase were optimized. The calculated transition pressure between the wurtzite rocksalt phases comes out to be about 52 GPa at the Hartree-Fock level and about 35 GPa at the correlated level. The calculated electronic structure shows strong hybridization of Ga 3d and N 2s states with the ordering as Ga 3d < N 2s < N 2p in all the phases. The band gap is direct at Gamma in the wurtzite and zinc-blende phases and is indirect in the high pressure rocksalt phase where the valence band maximum is shifted away from the Gamma point.
引用
收藏
页码:1357 / 1361
页数:5
相关论文
共 25 条
[1]   CORRELATION CORRECTION TO THE HARTREE-FOCK TOTAL ENERGY OF SOLIDS [J].
CAUSA, M ;
DOVESI, R ;
PISANI, C ;
COLLE, R ;
FORTUNELLI, A .
PHYSICAL REVIEW B, 1987, 36 (02) :891-897
[2]   CRITICAL-EVALUATION OF THE STATUS OF THE AREAS FOR FUTURE-RESEARCH REGARDING THE WIDE BAND-GAP SEMICONDUCTORS DIAMOND, GALLIUM NITRIDE AND SILICON-CARBIDE [J].
DAVIS, RF ;
SITAR, Z ;
WILLIAMS, BE ;
KONG, HS ;
KIM, HJ ;
PALMOUR, JW ;
EDMOND, JA ;
RYU, J ;
GLASS, JT ;
CARTER, CH .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1988, 1 (01) :77-104
[3]   TREATMENT OF COULOMB INTERACTIONS IN HARTREE-FOCK CALCULATIONS OF PERIODIC-SYSTEMS [J].
DOVESI, R ;
PISANI, C ;
ROETTI, C ;
SAUNDERS, VR .
PHYSICAL REVIEW B, 1983, 28 (10) :5781-5792
[4]  
DOVESI R, 1992, CRYSTAL 92 USER DOCU
[5]   ELECTRONIC AND STRUCTURAL-PROPERTIES OF GAN BY THE FULL-POTENTIAL LINEAR MUFFIN-TIN ORBITALS METHOD - THE ROLE OF THE D-ELECTRONS [J].
FIORENTINI, V ;
METHFESSEL, M ;
SCHEFFLER, M .
PHYSICAL REVIEW B, 1993, 47 (20) :13353-13362
[6]  
GLASS JT, 1990, DIAMOND SILICON CARB, P162
[7]   BAND-STRUCTURE AND HIGH-PRESSURE PHASE-TRANSITION IN GAN [J].
GORCZYCA, I ;
CHRISTENSEN, NE .
SOLID STATE COMMUNICATIONS, 1991, 80 (05) :335-338
[8]   GALLIUM NITRIDE STUDIED BY ELECTRON-SPECTROSCOPY [J].
HEDMAN, J ;
MARTENSSON, N .
PHYSICA SCRIPTA, 1980, 22 (02) :176-178
[9]   ELECTRONIC-STRUCTURE OF THE ROCK-SALT-STRUCTURE SEMICONDUCTORS ZNO AND CDO [J].
JAFFE, JE ;
PANDEY, R ;
KUNZ, AB .
PHYSICAL REVIEW B, 1991, 43 (17) :14030-14034
[10]   HARTREE-FOCK STUDY OF PHASE-CHANGES IN ZNO AT HIGH-PRESSURE [J].
JAFFE, JE ;
HESS, AC .
PHYSICAL REVIEW B, 1993, 48 (11) :7903-7909