ELECTRICAL CONDUCTION THROUGH THIN AMORPHOUS SIC FILMS

被引：18

作者：

HARTMAN, TE

BLAIR, JC

MEAD, CA

机构：

[1] Texas Instruments Incorporated, Dallas, Texas and California Institute of Technology, Pasadena, CA

来源：

THIN SOLID FILMS | 1968年 / 2卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(68)90014-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The current density through amorphous SiC films 80 to 800 Å thick deposited pyrolytically on refractory metal substrates is described by j = K(T,d)Vn(T,d) where T is the absolute temperature and d the film thickness. This type of electrical characteristic is similar to that obtained for compressed granulated SiC pellets or varistors and also for amorphous thin films of semiconductors and insulators. © 1968.

引用

页码：79 / &

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