IN2O3-(SN) AND SNO2-(F) FILMS - APPLICATION TO SOLAR-ENERGY CONVERSION .2. ELECTRICAL AND OPTICAL-PROPERTIES

被引：161

作者：

MANIFACIER, JC ^{[1
]}

SZEPESSY, L ^{[1
]}

BRESSE, JF ^{[1
]}

PEROTIN, M ^{[1
]}

STUCK, R ^{[1
]}

机构：

[1] CTR RECH NUCL,GROUPE PHYS & APPLICAT SEMICOND PHASE,F-67037 STRASBOURG,FRANCE

来源：

MATERIALS RESEARCH BULLETIN | 1979年 / 14卷 / 02期

关键词：

D O I：

10.1016/0025-5408(79)90115-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Highly conductive and transparent thin films of SnO2 : F and In2O3 : Sn have been prepared using the simple pyrolitic (spray) method. The electrical properties of these layers are studied in relation to their dopant concentrations and their stoichiometric deviation. Typically we obtained for In2O3 : Sn and SnO2 : F layers having the best overall properties (higher transparency and lower sheet resistance), resistivities ranging between 4 and 6.10-4 Ω cm with transparency exceding 85% over the visible and near infra-red range of the spectrum. Emphasis is put on the possible applications of these films in solar energy conversion systems (solar cell and flat plate collectors technology). © 1979.

引用

页码：163 / 175

页数：13

共 27 条

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