ELECTRICAL PINCH IN INTRINSIC ELASTICALLY BENT GERMANIUM

被引：10

作者：

BOIKO, II

ZHADKO, IP

ROMANOV, VA

机构：

[1] Institute of Semiconductors, Academy of Sciences of the Ukrainian Ssr

来源：

PHYSICA STATUS SOLIDI | 1969年 / 34卷 / 02期

关键词：

D O I：

10.1002/pssb.19690340205

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Theoretical and experimental investigations of the conductivity of elastically bent intrinsic Ge are performed. An high asymmetry of the current—voltage characteristic is predicted and observed in plates with a high velocity of surface recombination. It is connected with the deviation of the spatial distribution of carriers for two opposite directions of current, flowing through the crystal. It is shown that a negative differential resistance in thin crystals may arise at great electrical fields. Current oscillations connected with the Joule heating of the specimen are observed. Copyright © 1969 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：461 / &