LUMINESCENCE OF HEAVILY DOPED, HIGHLY EXCITED CDS-IN CRYSTALS

被引:4
作者
NEUKIRCH, U [1 ]
BROSER, I [1 ]
RASS, R [1 ]
机构
[1] TECH UNIV BERLIN,INST FACHDIDAKT PHYS & LEHRERBILDUNG,W-1000 BERLIN 12,GERMANY
关键词
D O I
10.1016/0022-0248(90)91072-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Heavily doped CdS: In crystals exhibit a broad luminescence band in the region of the band gap energy. This band shifts to higher energies with increasing In concentration. We attribute this emission to non-k-conserving band-to-band transitions and compare the experimental data to theoretical calculations. For increasing laser pulse intensities the luminescence broadens and shifts to higher energies. We explain this effects on the basis of band structure modifications due to the high carrier density. Some crystals additionally exhibit a narrow-band high excitation line (FWHM ≈ 1.5 nm). This line is discussed by assuming the creation of an electron-hole plasma. © 1989.
引用
收藏
页码:743 / 747
页数:5
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