HIGH-FREQUENCY PERFORMANCE FOR SUB-0.1 MU-M GATE INAS-INSERTED-CHANNEL INALAS/INGAAS HEMT

被引：14

作者：

AKAZAKI, T

ENOKI, T

ARAI, K

UMEDA, Y

ISHII, Y

机构：

[1] NTT LSI Laboratories, Atsugi-shi, Kartagawa, 243-01, 3-1, Morinosato-Wakamiya

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 13期

关键词：

MICROWAVE DEVICES AND COMPONENTS;

D O I：

10.1049/el:19920776

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Letter examines the high-frequency performance of a sub-0.1-mu-m gate InAlAs/InGaAs HEMT with a thin InAs layer inserted into the InGaAs channel. The transconductance is 2.1 S/mm and the current-gain cutoff frequency is 264 GHz using a 0.08-mu-m-long gate.

引用

页码：1230 / 1231

页数：2

共 4 条

[1]

AKAZAKI T, 1992, IEEE ELECTRON DEVICE

[2] W-BAND LOW-NOISE INALAS INGAAS LATTICE-MATCHED HEMTS [J].

CHAO, PC ;

TESSMER, AJ ;

DUH, KHG ;

HO, P ;

KAO, MY ;

SMITH, PM ;

BALLINGALL, JM ;

LIU, SMJ ;

JABRA, AA .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (01) :59-62

[3] DELAY TIME ANALYSIS FOR 0.4-MUM TO 5-MUM-GATE INALAS-INGAAS HEMTS [J].

ENOKI, T ;

ARAI, K ;

ISHII, Y .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (11) :502-504

[4]

Mishra U. K., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P101, DOI 10.1109/IEDM.1989.74237

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