RAMAN-STUDY OF A ZNIN2S4 LAYERED COMPOUND

被引：25

作者：

LOPEZRIVERA, SA

MARTINEZ, L

FONTAL, B

GIRIAT, W

MEDINA, F

机构：

[1] UNIV LOS ANDES,DEPT QUIM,MERIDA,VENEZUELA

[2] INST VENEZOLANO INVEST CIENT,CTR FIS,CARACAS 1020A,VENEZUELA

[3] FLORIDA ATLANTIC UNIV,DEPT PHYS,BOCA RATON,FL 33431

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1995年 / 10卷 / 05期

关键词：

D O I：

10.1088/0268-1242/10/5/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the Raman scattering of single-crystal ZnIn2S4 as a function of temperature in the range between 12 K and room temperature and an analysis of the relative intensity changes for all the bands. Based on a group theoretical analysis using the different possible space groups for this structure, the vibrational modes for the Raman spectra were obtained and compared with the experimental data. A new space group is proposed for the crystal structure for this semiconductor.

引用

页码：645 / 652

页数：8

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