LOW-TEMPERATURE GROWTH OF BI4TI3O12 EPITAXIAL-FILMS ON SRTIO3(001) AND BI2SR2CACU2O8(001) SINGLE-CRYSTALS BY LASER MOLECULAR-BEAM EPITAXY

被引：32

作者：

CHOOPUN, S

MATSUMOTO, T

KAWAI, T

机构：

[1] Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 08期

关键词：

D O I：

10.1063/1.114468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial thin films of bismuth titanate Bi4Ti3O12 have been grown by laser molecular beam epitaxy on SrTiO3(001) and Bi2Sr2CaCu2O8(001) single crystal at low processing temperature. X-ray diffraction patterns exhibit that c-axis oriented Bi4Ti3O12 thin films can be grown at a substrate temperature as low as 450 degrees C with good crystallinity and no presence of secondary phases. RHEED patterns evidence the flat surface of the films and the layer-by-layer growth mode. (C) 1995 American Institute of Physics.

引用

页码：1072 / 1074

页数：3