UNINTENTIONAL INCORPORATION OF CONTAMINANTS DURING CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE

被引：8

作者：

KARMANN, S ^{[1
]}

DICIOCCIO, L ^{[1
]}

BLANCHARD, B ^{[1
]}

OUISSE, T ^{[1
]}

MUYARD, D ^{[1
]}

JAUSSAUD, C ^{[1
]}

机构：

[1] UNIV JENA,INST FESTKORPERPHYS,D-07743 JENA,GERMANY

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 29卷 / 1-3期

关键词：

SILICON CARBIDE; DOPING EFFECTS; CHEMICAL VAPOR DEPOSITION;

D O I：

10.1016/0921-5107(94)04021-U

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

6H SiC layers were grown by chemical vapour deposition. The contents of nitrogen, aluminum and boron contaminants were determined by secondary ion mass spectroscopy. The incorporation of these elements leads to unintentionially p-type layers when growth is performed on uncoated graphite susceptors. The use of coated susceptor materials yields n-type layers. The lowest achieved doping levels are determined by capacitance-voltage measurements to be N-A - N-D = 1 x 10(14) cm(-3) and N-D - N-A = 4 x 10(15) cm(-3). An attempt is made to explain the observed doping mechanism using a recently proposed model of ''site competition'' during epitaxial growth.

引用

页码：134 / 137

页数：4

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