RESPONSE OF SILICON DETECTORS TO MONOENERGETIC ELECTRONS WITH ENERGIES BETWEEN 0.15 AND 5.0 MEV

By means of measurements as well as Monte Carlo calculations response functions have been obtained which describe the pulse-height distributions produced by monoenergetic electrons incident perpendicularly on silicon detectors. Generally good agreement has been found between experimental and Monte Carlo results at energies of 0.25, 0.50, 0.75 and 1.00 MeV for detectors with thicknesses of 0.061, 0.105, 0.191, 0.530, 1.0 and 3.0 mm. Additional calculated results have been obtained as follows: (1) response functions at fifteen energies between 0.15 and 5.0 MeV for detectors with ten thicknesses between 0.05 and 10.0 mm; (2) response functions for arrangements in which the silicon detector is shielded partially or completely by other detectors operating in anticoincidence; (3) reflection, transmission and absorption coefficients of electrons for plane-parallel silicon targets. © 1969.